{"created":"2021-03-01T06:55:01.465759+00:00","id":17739,"links":{},"metadata":{"_buckets":{"deposit":"93f5412b-5523-4442-96e9-4eb69a76a769"},"_deposit":{"id":"17739","owners":[],"pid":{"revision_id":0,"type":"depid","value":"17739"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00017739","sets":["117:789","3:62:5591:603"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"473","bibliographicPageStart":"468","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"IEEE transactions on nuclear science"}]}]},"item_5_creator_3":{"attribute_name":"著者別名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"原, 和彦"}],"nameIdentifiers":[{},{},{}]}]},"item_5_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Radiation tolerance up to 1015 1-MeV neq/cm2 is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n+-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4\" and 6\" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ and MCZ growth are tested. They are different in crystal orientations lang100rang and lang111rang with different wafer resistivities. The sensors were irradiated with 70-MeV protons and characterized in views of the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.","subitem_description_type":"Abstract"}]},"item_5_identifier_34":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2241/102519"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/TNS.2009.2014162","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2009 IEEE"}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9499","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00667999","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hara, Kazuhiko"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Inoue, Koki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mochizuki, Ai"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Meguro, Tatsuma"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hatano, Hiromitsu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ikegami, Yoichi"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Kohriki, Takashi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Terada, Susumu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Unno, Yoshinobu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamamura, Kazuhisa"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kamata, Shintaro"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2013-12-19"}],"displaytype":"detail","filename":"IEEE-TNS_56-2.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"IEEE-TNS_56-2.pdf","url":"https://tsukuba.repo.nii.ac.jp/record/17739/files/IEEE-TNS_56-2.pdf"},"version_id":"3b02bbaa-9822-4282-b483-25d3a2b792bc"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Development of Radiation Hard N+-on-P Silicon Microstrip Sensors for Super LHC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Development of Radiation Hard N+-on-P Silicon Microstrip Sensors for Super LHC"}]},"item_type_id":"5","owner":"1","path":["789","603"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-05-20"},"publish_date":"2009-05-20","publish_status":"0","recid":"17739","relation_version_is_last":true,"title":["Development of Radiation Hard N+-on-P Silicon Microstrip Sensors for Super LHC"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:37:32.415763+00:00"}