@article{oai:tsukuba.repo.nii.ac.jp:00017739, author = {原, 和彦 and Hara, Kazuhiko and Inoue, Koki and Mochizuki, Ai and Meguro, Tatsuma and Hatano, Hiromitsu and Ikegami, Yoichi and Kohriki, Takashi and Terada, Susumu and Unno, Yoshinobu and Yamamura, Kazuhisa and Kamata, Shintaro}, issue = {2}, journal = {IEEE transactions on nuclear science}, month = {Apr}, note = {application/pdf, Radiation tolerance up to 1015 1-MeV neq/cm2 is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n+-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4" and 6" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ and MCZ growth are tested. They are different in crystal orientations lang100rang and lang111rang with different wafer resistivities. The sensors were irradiated with 70-MeV protons and characterized in views of the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.}, pages = {468--473}, title = {Development of Radiation Hard N+-on-P Silicon Microstrip Sensors for Super LHC}, volume = {56}, year = {2009} }