2024-03-29T11:17:41Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00054826
2022-04-27T09:29:08Z
117:7791
3:62:5296:2536
Strain-engineering of charge transport in the correlated Dirac semimetal of perovskite CaIrO3 thin films
藤岡, 淳
フジオカ, ジュン
FUJIOKA, Jun
Masuko, M.
Nakamura, M.
Kawasaki, M.
Tokura, Y.
We have investigated the charge transport in thin films of correlated Dirac semimetal of perovskite CaIrO3 by measurements of resistivity and optical spectra. The semimetallic transport of either electron-type or hole-type carrier is observed in the strain-relaxed thin films. By controlling the strain relaxation via thermal annealing, the carrier density decreases in both n-type and p-type samples, while enhancing the carrier mobility up to 160 cm2 V−1 s−1 at an electron density of 2.5 × 1018 cm−3 at 2 K. We propose that the energy of Dirac line node, which locates in proximity to the Fermi level, varies with the lattice distortion or strain-sensitive defect character, causing the sign change in the charge carrier as well as the mobility enhancement.
journal article
AIP Publishing
2019-08
application/pdf
APL Materials
8
7
081115
2166-532X
https://tsukuba.repo.nii.ac.jp/record/54826/files/APLM_7-8.pdf
eng
10.1063/1.5109582
© 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5109582