2024-03-29T01:57:29Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00054769
2023-09-28T03:18:40Z
117:133
117:7557
117:7969
3:62:5296:4854
Asymmetric Carrier Penetration into Hexagonal Boron Nitride in Graphene Field-Effect Transistors
岡田, 晋
オカダ, ススム
OKADA, Susumu
丸山, 実那
マルヤマ, ミナ
MARUYAMA, Mina
高, 燕林
コウ, エンリン
GAO, Yanlin
journal article
IOP Publishing
The Japan Society of Applied Physics
2020-06
application/pdf
Applied Physics Express
7
13
075005
1882-0778
AA12295133
https://tsukuba.repo.nii.ac.jp/record/54769/files/APEX_13-7.pdf
eng
https://doi.org/10.35848/1882-0786/ab9762
(c) 2020 The Japan Society of Applied Physics
This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/ab9762
open access