2024-03-28T14:52:59Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00048514
2024-02-09T02:00:54Z
117:5349
3:62:5296:1577
Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
Fujita, Eigo
Sometani, Mitsuru
Hatakeyama, Tetsuo
Harada, Shinsuke
矢野, 裕司
ヤノ, ヒロシ
YANO, Hiroshi
Hosoi, Takuji
Shimura, Takayoshi
Watanabe, Heiji
journal article
American Institute of Physics
2018-08
application/pdf
AIP Advances
8
8
085305
2158-3226
https://tsukuba.repo.nii.ac.jp/record/48514/files/AIPAdv_8-8.pdf
eng
https://doi.org/10.1063/1.5034048
©2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5034048
open access