2024-03-29T08:33:49Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00039607
2023-12-21T06:12:53Z
117:2585
3:62:5296:64
Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping
Koike, Masahiro
Kamimuta, Yuuichi
Tezuka, Tsutomu
山部, 紀久夫
ヤマベ, キクオ
YAMABE, Kikuo
journal article
AIP Publishing
2016-09
application/pdf
Applied Physics Letters
10
109
102104
0003-6951
AA00543431
https://tsukuba.repo.nii.ac.jp/record/39607/files/APL_109-10.pdf
eng
https://doi.org/10.1063/1.4962436
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
The following article appeared in Appl. Phys. Lett. 109, 102104 (2016) and may be found at http://dx.doi.org/10.1063/1.4962436.
open access