2024-03-28T19:18:28Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00029169
2024-02-06T02:14:10Z
117:1717
117:494
3:62:5592:414
Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
都甲, 薫
トコウ, カオル
TOKO, Kaoru
Fukata, Naoki
Nakazawa, Koki
Kurosawa, Masashi
Usami, Noritaka
Miyao, Masanobu
末益, 崇
スエマス, タカシ
SUEMASU, Takashi
journal article
Elsevier
2013-06
application/pdf
Journal of crystal growth
372
189
192
0022-0248
AA00696341
https://tsukuba.repo.nii.ac.jp/record/29169/files/JCG_372.pdf
eng
https://doi.org/10.1016/j.jcrysgro.2013.03.031
© 2013 Elsevier B.V.
NOTICE: this is the author’s version of a work that was accepted for publication in Journal of crystal growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of crystal growth, Volume 372, 2013, DOI:10.1016/j.jcrysgro.2013.03.031
open access