2024-03-29T13:29:24Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00008287
2023-05-02T01:56:20Z
3:233:254
Athermal stress release of silicon surface and the microscopic structure
シリコン表面の非熱的応力緩和とその微細構造
成島, 哲也
34572
Narushima, Tetsuya
筑波大学
University of Tsukuba
博士(理学)
Doctor of Philosophy in Science
A new mechanism of recrystallization is presented in this thesis by using irradiation of very low energy electron on the disordered surfaces of Si. The recrystallization was observed by means of two experimental methods from both the macroscopic point of view and also from the microscopic one: surface stress measurement and Scanning Tunneling Microscopy. It was found that the recrystallization is dominated not by thermal activation mechanism,but by non-thermal mechanism induced by irradiated electrons. It is well known that thermal annealing at high temperatures can recrystallize a surface disordered layer and release the surface stress of the disordered layer. However, ...
2001
Includes bibliographical references
doctoral thesis
2002
2002-03-25
application/pdf
application/pdf
甲第2847号
https://tsukuba.repo.nii.ac.jp/record/8287/files/A2847.pdf
https://tsukuba.repo.nii.ac.jp/record/8287/files/1.pdf
eng
open access