2024-03-29T00:28:42Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00054826
2022-04-27T09:29:08Z
117:7791
3:62:5296:2536
Strain-engineering of charge transport in the correlated Dirac semimetal of perovskite CaIrO3 thin films
藤岡, 淳
フジオカ, ジュン
FUJIOKA, Jun
Masuko, M.
Nakamura, M.
Kawasaki, M.
Tokura, Y.
© 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5109582
We have investigated the charge transport in thin films of correlated Dirac semimetal of perovskite CaIrO3 by measurements of resistivity and optical spectra. The semimetallic transport of either electron-type or hole-type carrier is observed in the strain-relaxed thin films. By controlling the strain relaxation via thermal annealing, the carrier density decreases in both n-type and p-type samples, while enhancing the carrier mobility up to 160 cm2 V−1 s−1 at an electron density of 2.5 × 1018 cm−3 at 2 K. We propose that the energy of Dirac line node, which locates in proximity to the Fermi level, varies with the lattice distortion or strain-sensitive defect character, causing the sign change in the charge carrier as well as the mobility enhancement.
AIP Publishing
2019-08
eng
journal article
http://hdl.handle.net/2241/00160233
https://tsukuba.repo.nii.ac.jp/records/54826
10.1063/1.5109582
2166-532X
APL Materials
7
8
081115
https://tsukuba.repo.nii.ac.jp/record/54826/files/APLM_7-8.pdf
application/pdf
1.2 MB
2020-06-26