2024-03-28T08:28:27Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00038979
2023-12-25T01:54:22Z
117:5066
117:5135
3:62:5592:74
Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam
上殿, 明良
ウエドノ, アキラ
UEDONO, Akira
Malinverni, Marco
Martin, Denis
奥村, 宏典
オクムラ, ヒロノリ
OKUMURA, Hironori
Ishibashi, Shoji
Grandjean, Nicolas
open access
© 2016 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in J. Appl. Phys. 119, 245702(2016) and may be found at http://dx.doi.org/10.1063/1.4954288
American Institute of Physics
2016-06
eng
journal article
VoR
http://hdl.handle.net/2241/00143650
https://tsukuba.repo.nii.ac.jp/records/38979
https://doi.org/10.1063/1.4954288
0021-8979
AA00693547
Journal of Applied Physics
119
24
245702
https://tsukuba.repo.nii.ac.jp/record/38979/files/JAP_119-24.pdf
application/pdf
934.5 kB
2017-07-01