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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
Du, Weijie
Baba, Masakazu
都甲, 薫
トコウ, カオル
TOKO, Kaoru
Hara, Kosuke O.
Watanabe, Kentaro
Sekiguchi, Takashi
Usami, Noritaka
末益, 崇
スエマス, タカシ
SUEMASU, Takashi
open access
© 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 115, 223701 (2014) and may be found at http://dx.doi.org/10.1063/1.4882117.
American Institute of Physics
2014-06
eng
journal article
VoR
http://hdl.handle.net/2241/00121623
https://tsukuba.repo.nii.ac.jp/records/31045
https://doi.org/10.1063/1.4882117
0021-8979
AA00693547
Journal of Applied Physics
115
22
223701
https://tsukuba.repo.nii.ac.jp/record/31045/files/JAP_115-22.pdf
application/pdf
602.5 kB
2014-07-03