2024-03-28T09:27:25Z
https://tsukuba.repo.nii.ac.jp/oai
oai:tsukuba.repo.nii.ac.jp:00028085
2024-02-06T06:20:35Z
117:1717
117:494
3:62:5602:448
Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy
Khan, M. Ajmal
Saito, T.
Nakamura, K.
Baba, M.
Du, W.
Toh, K.
都甲, 薫
トコウ, カオル
TOKO, Kaoru
末益, 崇
スエマス, タカシ
SUEMASU, Takashi
open access
© 2012 Elsevier B.V.
NOTICE: this is the author’s version of a work that was accepted for publication in Thin solid films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in PUBLICATION, VOL522, 2012, DOI:10.1016/j.tsf.2012.09.005
Elsevier
2012-11
eng
journal article
AM
http://hdl.handle.net/2241/118071
https://tsukuba.repo.nii.ac.jp/records/28085
https://doi.org/10.1016/j.tsf.2012.09.005
0040-6090
AA00863068
Thin solid films
522
95
99
https://tsukuba.repo.nii.ac.jp/record/28085/files/TSF_522.pdf
application/pdf
346.8 kB
2013-12-25