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Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy
http://hdl.handle.net/2241/118071
http://hdl.handle.net/2241/1180713b0b492b-f942-4e16-867c-d721afbea2da
名前 / ファイル | ライセンス | アクション |
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TSF_522.pdf (346.8 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2012-12-17 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Khan, M. Ajmal
× Khan, M. Ajmal× Saito, T.× Nakamura, K.× Baba, M.× Du, W.× Toh, K.× 都甲, 薫× 末益, 崇 |
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書誌情報 |
en : Thin solid films 巻 522, p. 95-99, 発行日 2012-11 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0040-6090 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00863068 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.tsf.2012.09.005 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2012 Elsevier B.V. | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | NOTICE: this is the author’s version of a work that was accepted for publication in Thin solid films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in PUBLICATION, VOL522, 2012, DOI:10.1016/j.tsf.2012.09.005 | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Elsevier |