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Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material
http://hdl.handle.net/2241/116999
http://hdl.handle.net/2241/1169995b3a9e7a-0905-4763-a1ff-660daf0a54ff
名前 / ファイル | ライセンス | アクション |
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APL_100-9.pdf (1.1 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2012-05-11 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Umezawa, Naoto
× Umezawa, Naoto× 白石, 賢二 |
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書誌情報 |
en : Applied Physics Letters 巻 100, 号 9, p. 092904, 発行日 2012-02 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.3689968 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 100, 092904 (2012) and may be found at http://apl.aip.org/resource/1/applab/v100/i9/p092904_s1. |
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出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | AIP Publishing |