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Extraction of additional interfacial states of silicon nanowire field-effect transistors
http://hdl.handle.net/2241/113566
http://hdl.handle.net/2241/1135662c218064-24a3-4715-9f4f-89abdf47c0c0
名前 / ファイル | ライセンス | アクション |
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APL_98-23.pdf (270.8 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2011-07-20 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Extraction of additional interfacial states of silicon nanowire field-effect transistors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Sato, Soshi
× Sato, Soshi× Li, Wei× Kakushima, Kuniyuki× 大毛利, 健治× Natori, Kenji× Yamada, Keisaku× Iwai, Hiroshi |
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書誌情報 |
en : Applied Physics Letters 巻 98, 号 23, p. 233506, 発行日 2011-06 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.3598402 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The article appeared in Appl. Phys. Lett. 98, 233506 and may be found at http://apl.aip.org/resource/1/applab/v98/i23/p233506_s1 | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | AIP Publishing |