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Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation
http://hdl.handle.net/2241/00159538
http://hdl.handle.net/2241/001595382d76be5c-c560-4e25-9b22-3b7107430bbe
名前 / ファイル | ライセンス | アクション |
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JPC_3-7-075005 (1.1 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2020-02-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
都甲, 薫
× 都甲, 薫× 末益, 崇× Benincasa, Louise× Hoshida, Hirofumi× Deng, Tianguo× Sato, Takuma× Xu, Zhihao× Terai, Yoshikazu |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Photoluminescence (PL) measurements were carried out on 0.5-μm thick BaSi2 epitaxial films grown on Si(111) substrates with various Ba-to-Si deposition rate ratios (R Ba/R Si) in the range of 1.7–5.1. The samples were excited from both the frontside (BaSi2) and the backside (Si substrate), at temperatures in the range of 8–50 K. These measurements have highlighted the existence of localized states within the bandgap that result from defects in the BaSi2 films. The PL intensity is highly dependent on the excitation power, temperature, and R Ba/R Si. Of those studied, the BaSi2 film at R Ba/R Si = 4.0 showed the most intense PL and weak photoresponsivity, whereas the PL intensity was weaker for the other samples. Therefore, we chose this sample for a detailed PL investigation. Based on the results we determined the energy separation between localized states, corresponding to PL peak energies. The difference in PL spectra excited from the BaSi2-side and Si-side is attributed to the difference in kinds of defects emitting PL. The photoresponsivity of the BaSi2 was drastically enhanced by atomic hydrogen passivation, and the PL intensity of the sample decreased accordingly. | |||||
書誌情報 |
en : Journal of Physics Communications 巻 3, 号 7, p. 075005, 発行日 2019-07 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2399-6528 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1088/2399-6528/ab2fa1 | |||||
権利 | ||||||
権利情報 | Original content from thiswork may be used underthe terms of theCreativeCommons Attribution 3.0licence. | |||||
権利 | ||||||
権利情報 | Any further distribution ofthis work must maintainattribution to theauthor(s)and the title ofthe work, journal citationand DOI. | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | IOP Publishing |