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Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films
http://hdl.handle.net/2241/00152937
http://hdl.handle.net/2241/00152937f52d7916-6e31-474f-9da4-47d67ade7d07
名前 / ファイル | ライセンス | アクション |
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JAP_123-4.pdf (1.4 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2018-07-19 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Takabe, Ryota
× Takabe, Ryota× Deng, Tianguo× Kodama, Komomo× Yamashita, Yudai× Sato, Takuma× 都甲, 薫× 末益, 崇 |
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書誌情報 |
en : Journal of Applied Physics 巻 123, 号 4, p. 045703, 発行日 2018-01 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.4994850 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in 123, 45703 (2018) and may be found at https://doi.org/10.1063/1.4994850. | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics |