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Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures
http://hdl.handle.net/2241/00146081
http://hdl.handle.net/2241/00146081208a16b2-89ab-4d61-847b-73c35d3f8bfb
名前 / ファイル | ライセンス | アクション |
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Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures (214.6 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2017-05-12 | |||||
タイトル | ||||||
タイトル | Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | SiC | |||||
キーワード | ||||||
主題 | MOS interface | |||||
キーワード | ||||||
主題 | Near interface traps | |||||
キーワード | ||||||
主題 | Boron diffusion | |||||
キーワード | ||||||
主題 | Thermal dielectric relaxation current | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
OKAMOTO, Dai
× OKAMOTO, Dai× SOMETANI, Mitsuru× HARADA, Shinsuke× KOSUGI, Ryoji× YONEZAWA, Yoshiyuki× YANO, Hiroshi |
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著者別名 |
岡本, 大
× 岡本, 大× 矢野, 裕司 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The reason for the effective removal of interface traps in SiO2/4H-SiC (0001) structures by boron (B) incorporation was investigated by employing low-temperature electrical measurements. Low-temperature capacitance–voltage and thermal dielectric relaxation current measurements revealed that the density of electrons captured in slow interface traps in B-incorporated oxide is lower than that in dry and NO-annealed oxides. These results suggest that near-interface traps can be removed by B incorporation, which is considered to be an important reason for the increase in the field-effect mobility of 4H-SiC metal–oxide–semiconductor devices. A model for the passivation mechanism is proposed that takes account of stress relaxation during thermal oxidation. | |||||
書誌情報 |
Applied Physics A: Materials Science & Processing 巻 2017, p. 123-133, 発行日 2017-01-30 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0947-8396 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1007/s00339-016-0724-1 | |||||
権利 | ||||||
権利情報 | The final publication is available at Springer via http://dx.doi.org/10.1007/s00339-016-0724-1. | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Springer Verlag |