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Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias
http://hdl.handle.net/2241/120748
http://hdl.handle.net/2241/120748886c8289-83f7-42d3-b827-a88e763d3fb1
名前 / ファイル | ライセンス | アクション |
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EDL_35-1.pdf (316.2 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2014-02-10 | |||||
タイトル | ||||||
タイトル | Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Wei, Feng
× Wei, Feng× Chun, Meng Dou× Niwa, M.× Yamada, K.× Ohmori, K. |
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著者別名 |
山田, 啓作
× 山田, 啓作× 大毛利, 健治 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic Vg by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits. | |||||
書誌情報 |
IEEE Electron Device Letters 巻 35, 号 1, p. 3-5, 発行日 2014-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0741-3106 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00231428 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1109/LED.2013.2288981 | |||||
権利 | ||||||
権利情報 | © 2014 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Institute of Electrical and Electronics Engineers | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2241/120748 | |||||
識別子タイプ | HDL |