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Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy
http://hdl.handle.net/2241/119787
http://hdl.handle.net/2241/1197876a61bbf3-6ae8-4927-a717-d6da3db1eb04
名前 / ファイル | ライセンス | アクション |
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JCG_378_365.pdf (319.5 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2013-09-30 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Funase, Y.
× Funase, Y.× Suzuno, M.× 都甲, 薫× 末益, 崇 |
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書誌情報 |
en : Journal of crystal growth 巻 378, p. 365-367, 発行日 2013-09 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2012.12.061 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2013 Elsevier B.V. | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | NOTICE: this is the author’s version of a work that was accepted for publication in Journal of crystal growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of crystal growth, 378, 2013 http://dx.doi.org/10.1016/j.jcrysgro.2012.12.061 | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Elsevier |