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Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors
http://hdl.handle.net/2241/113351
http://hdl.handle.net/2241/11335159a203b8-972f-4f78-9adc-250a077a042b
名前 / ファイル | ライセンス | アクション |
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MR_51-5.pdf (539.8 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2011-06-21 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Sato, Soshi
× Sato, Soshi× Kakushima, Kuniyuki× Ahmet, Parhat× 大毛利, 健治× Natori, Kenji× 山田, 啓作× Iwai, Hiroshi |
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書誌情報 |
en : Microelectronics and reliability 巻 51, 号 5, p. 879-884, 発行日 2011-05 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0026-2714 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00738419 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.microrel.2010.12.007 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2010 Elsevier Ltd NOTICE: this is the author’s version of a work that was accepted for publication in Microelectronics and reliability. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in PUBLICATION, 51, 5, 2011 DOI:10.1016/j.microrel.2010.12.007 |
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出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Elsevier Ltd |